Features of Mechanisms of Electrical Conductivity in Semiconductive Solid Solution Lu1 – xScxNiSb

A comprehensive study of the crystal and electronic structures, thermodynamic, electrokinetic, energy, magnetic properties semiconductive solid solution Lu1-xScxNiSb, x = 0 – 0.10, revealed possibility doping Sc atoms different crystallographic sites depending on their concentration. This leads to generation structural defects donor and/or acceptor nature appearance corresponding energy levels (bands) in band gap ?g. The ratio ionized donors acceptors (degree compensation) determines position Fermi level ?F Lu1-xScxNiSb. dependence rate impurity concentration Sc, which mechanism electrical conductivity is established. investigated Lu1-xScxNiSb a promising thermoelectric material.